Reactive ion etching equipment

Summary

The tender concerns equipment for reactive ion etching to manufacture freestanding waveguides and process diamond and silicon carbide samples. The equipment must support two different etching regimes in the same chamber, provide decoupled plasma density and ion energy, active helium backside cooling, gentle surface-layer removal, pure oxygen plasma for diamond and fluorine chemistry using SF6/CHF3 for SiC. It must also have a gas box with at least five lines for fluorine and oxygen processes and an open-load design suitable for small irregular samples on carrier wafers. The procedure is open, and the submission deadline is 4 September 2026 at 00:00. Exact compliance and submission requirements must be checked in the tender documents.